डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FQA11N90 | 900V N-Channel MOSFET FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET
FQA11N90 / FQA11N90_F109
N-Channel QFET® MOSFET
900 V, 11.4 A, 960 mΩ
April 2013
Features
• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5 |
Fairchild Semiconductor |
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FQA11N90 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
FQA11N90
FEATURES ·Drain Current : ID= 11.4A@ TC=25℃ ·Drain Source Voltage
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.96Ω(Max) ·100% avalanche te |
Inchange Semiconductor |
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FQA11N90-F109 | N-Channel MOSFET FQA11N90-F109 — N-Channel QFET® MOSFET
FQA11N90-F109
N-Channel QFET® MOSFET
900 V, 11.4 A, 960 mΩ
Features
• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A
• Low Gate Charge (Typ. 72 |
ON Semiconductor |
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FQA11N90C | 900V N-Channel MOSFET FQA11N90C 900V N-Channel MOSFET
September 2006
QFET
FQA11N90C
900V N-Channel MOSFET
Features
• • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical |
Fairchild Semiconductor |
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FQA11N90C-F109 | N-Channel MOSFET FQA11N90C-F109 — N-Channel QFET® MOSFET
FQA11N90C-F109
N-Channel QFET® MOSFET
900 V, 11.0 A, 1.1 Ω
Features
• 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A • Low Gate Charge (Typ. 60 n |
ON Semiconductor |
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FQA11N90C_F109 | MOSFET FQA11N90C_F109 — N-Channel QFET® MOSFET
FQA11N90C_F109
N-Channel QFET® MOSFET
900 V, 11.0 A, 1.1 Ω
Features
• 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A • Low Gate Charge (Typ. 60 n |
Fairchild Semiconductor |
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FQA11N90_F109 | N-Channel QFET MOSFET FQA11N90_F109 — N-Channel QFET® MOSFET
FQA11N90_F109
N-Channel QFET® MOSFET
900 V, 11.4 A, 960 mΩ
Features
• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A
• Low Gate Charge (Typ. 72 |
Fairchild Semiconductor |
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