FMMT560 डाटा शीट PDF( Datasheet )

SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1 – NOVEMBER 1998 FEATURES * Excellent hFE characterisristics up to IC=50mA * Low Saturation voltages FMMT560 C PARTMARKING DETAIL – 560 B E ABSOLU

Description This bipolar junction transistor (BJT) has been designed to meet the stringent requirements of automotive applications. Features • BVCEO > -500V • IC = -150mA high Continuous Collector Current