FMMT494 डाटा शीट PDF( Datasheet )

FMMT494 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature  BVCEO > 120V  IC = 1A Continuous Collector Current  ICM = 2A Peak Pulse Current  500mW Power Dissipation  hFE Characteri

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL – 7 494 FMMT494 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter

FMMT494Q 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature  BVCEO > 1