FKI06190 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =16.5mΩ(Max) ·100% avalanche tested ·Minimu

60 V, 30 A, 12.1 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI06190 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ----------------------------------------------------------