FKI06075 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 8mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and

60 V, 52 A, 5.1 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI06075 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 5