| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
IGBT • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A • 100% of the Parts Tested for ILM(1) • High Input Impe |
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