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Feihonltd |
Schottky diodes 0 15.80 ±0.20 TO-220F 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.87 ±0.20 (1.00x45°) MAX1.47 0.80 ±0.10 (30°) 0.35 ±0.10 #1 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 0.50 +0.10 –0.05 2.76 ±0.20 9.75 ±0 |
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GFD |
MOSFET � VDS = 30 V, ID = 100 A RDS(ON) < 5.5 mΩ @ VGS = 10 V (Typ:4mΩ ) � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipa |
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HOOYI |
N-Channel Enhancement Mode MOSFET • 70V/75A, RDS(ON)=7.8mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management for Inverter Systems. S D G G D S TO-220 D G Ordering and Marking Informa |
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Intersil Corporation |
Radiation Hardened/ Ultra High Speed Current Feedback Amplifier • Electrically Screened to SMD # 5962-94676 • QML Qualified per MIL-PRF-38535 Requirements • Low Distortion (HD3, 30MHz). . . . . . . . . . . . -84dBc (Typ) • Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . 850MHz (Typ) • Very High Slew Rate . . |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Trench FET Power MOSFET l Low ON Resistance(Rdson≤5.3mΩ) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:300pF) l 100% Single Pulse avalanche energy Test Applications： UPS,DC Motor Control and Class D Amplifier. |
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Silan Microelectronics |
100V N-CHANNEL MOSFET Low gate charge Low Crss Fast switching Improved dv/dt capability 1 23 TO-220-3L 1 3 TO-263-2L NOMENCLATURE S V GX X X R X N X Silan Low voltage SGT MOS products Nominal voltage, using 2 digits; Example: 04 denotes 40V, 10 denotes 100V |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Trench FET Power MOSFET l Low ON Resistance(Rdson≤5.3mΩ) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:300pF) l 100% Single Pulse avalanche energy Test Applications： UPS,DC Motor Control and Class D Amplifier. |
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UTC |
N-CHANNEL MOSFET * RDS(ON) ≤ 2.3Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified SYMBOL Power MOSFET ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 5N100L-TA3-T 5N100G-TA3-T 5N100L-TF1-T 5N100G-TF1-T 5N10 |
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nexperia |
Coin cell battery life booster and benefits • Programmable constant battery load current: 2 mA to 16 mA • Protection against battery voltage dips (Brown-out) • Pulse output current: > 150 mA • Low ripple regulated programmable output voltage, VDH: 1.8 V to 3.6 V • Ultra-low standb |
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Feihonltd |
Schottky diodes 0 15.80 ±0.20 TO-220F 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.87 ±0.20 (1.00x45°) MAX1.47 0.80 ±0.10 (30°) 0.35 ±0.10 #1 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 0.50 +0.10 –0.05 2.76 ±0.20 9.75 ±0 |
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UNIKC |
P-Channel Enhancement Mode MOSFET e Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Ga |
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Microsemi Corporation |
N-Channel MOSFET • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asym |
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Alpha & Omega Semiconductors |
100V N-Channel MOSFET tion B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 370 260 1480 53 44 90 405 500 250 10 7 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol |
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Alpha & Omega Semiconductors |
100V N-Channel MOSFET ipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 180 180 800 43 36 100 500 500 250 10 7 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction- |
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UTC |
N-CHANNEL MOSFET * RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.0A * High switching speed * High breakdown voltage SYMBOL 2.Drain 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-251 1 TO-252 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free |
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Fairchild Semiconductor |
100V N-Channel PowerTrench MOSFET • 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V • Low gate charge (28nC typical) • Fast Switching • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D G S G D-PAK |
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Intersil Corporation |
8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET • 8A, 100V, rDS(ON) = 0.230Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Burr-Brown Corporation |
1.2V and 2.5V Micropower VOLTAGE REFERENCE q INITIAL ACCURACY: REF1004-1.2 ±4mV REF1004-2.5 ±20mV q MINIMUM OPERATING CURRENT: REF1004-1.2 10µA REF1004-2.5 20µA q EXCELLENT LONG TERM TEMPERATURE STABILITY q VERY LOW DYNAMIC IMPEDANCE q OPERATES UP TO 20mA q PACKAGE: 8-Lead SOIC APPLICATIONS q |
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Advanced Power Technology |
(APT9021DFN / APT10021DFN) N-Channel Enhancement Mode High Voltage Power MOSFET |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * Fast switching speed * RDS(ON) < 7.0mΩ @ VGS=10V, ID=50A * 100% avalanche tested * Improved dv/dt capability SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT100N06L-TA3-T UTT100N06G-TA3-T UTT100N06L-TF |
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