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FDS8958 | Dual N & P-Channel PowerTrench MOSFET www.DataSheet4U.com
FDS8958
October 2004
FDS8958
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fai |
Fairchild Semiconductor |
|
FDS8958A | Dual-Channel MOSFET FDS8958A
April 2008
FDS8958A
tm
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semicond |
Fairchild Semiconductor |
|
FDS8958A-F085 | Dual N&P-Channel MOSFET FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET
FDS8958A-F085
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement
mode power field effect transistors a |
ON Semiconductor |
|
FDS8958A_F085 | Dual N&P-Channel MOSFET FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET
February 2010
FDS8958A_F085
Dual N & P-Channel PowerTrench® MOSFET
tm
General Description
These dual N- and P-Channel enhancement mode power field effe |
Fairchild Semiconductor |
|
FDS8958B | MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET
FDS8958B
Dual N & P-Channel PowerTrench® MOSFET
Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
November 2013
Features
Q1: N-Channel |
Fairchild Semiconductor |
|
FDS8958B | Dual N & P-Channel Power MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET
FDS8958B
Dual N & P-Channel PowerTrench® MOSFET
Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Features
Q1: N-Channel Max rDS(on) |
ON Semiconductor |
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