FDS4435BZ डाटा शीट PDF( Datasheet )

FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A „ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A „

FDS4435BZ MOSFET – P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW Description This P−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to m

FDS4435BZ-F085 P-Channel PowerTrench® MOSFET FDS4435BZ-F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A „ Max rDS(on) = 35m: at VGS = -4.5V, ID =

FDS4435BZ_F085 P-Channel PowerTrench® MOSFET FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A „ Max rDS(on) = 35m: at VGS = -4.5V, ID =