डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDP2D3N10C | N-Channel MOSFET MOSFET – N-Channel, Shielded Gate POWERTRENCH)
100 V, 222 A, 2.3 mW
FDP2D3N10C, FDPF2D3N10C
General Description This N−Channel MV MOSFET is produced using onsemi’s
advanced POWERTRENCH process that incorp |
ON Semiconductor |
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FDP2D3N10C | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 100V ·Static drain-source on-resistance:
RDS(on) ≤ 2.3mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |