डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMS3669S | MOSFET FDMS3669S PowerTrench® Power Stage
FDMS3669S
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 14.5 mΩ at VGS |
Fairchild Semiconductor |
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FDMS3669S | Dual N-Channel MOSFET FDMS3669S PowerTrench® Power Stage
FDMS3669S
PowerTrench® Power Stage
General Description
Asymmetric Dual N-Channel MOSFET Features
Q1: N-Channel Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A Max rD |
ON Semiconductor |
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