डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMS3662 | MOSFET FDMS3662 N-Channel Power Trench® MOSFET
November 2014
FDMS3662
N-Channel Power Trench® MOSFET
100V, 39A, 14.8mΩ
Features
General Description
Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A Advanced |
Fairchild Semiconductor |
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FDMS3662 | N-Channel MOSFET MOSFET – N-Channel POWERTRENCH)
100 V, 39 A, 14.8 mW
FDMS3662
Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the o |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |