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FDMS3660S | Asymmetric Dual N-Channel MOSFET FDMS3660S PowerTrench® Power Stage
FDMS3660S
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = |
Fairchild Semiconductor |
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FDMS3660S | Asymmetric Dual N-Channel MOSFET FDMS3660S
PowerTrench) Power Stage
Asymmetric Dual N−Channel MOSFET
Description This device includes two specialized N−Channel MOSFETs in a
dual PQFN package. The switch node has been internally connected t |
ON Semiconductor |
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