डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMS3606AS | MOSFET FDMS3606AS PowerTrench® Power Stage
FDMS3606AS
PowerTrench® Power Stage
September 2011
30 V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 |
Fairchild Semiconductor |
|
FDMS3606AS | Asymmetric Dual N-Channel MOSFET FDMS3606AS PowerTrench® Power Stage
FDMS3606AS
PowerTrench® Power Stage
30 V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at |
ON Semiconductor |
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