डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMS3602S | MOSFET FDMS3602S PowerTrench® Power Stage
FDMS3602S
PowerTrench® Power Stage
July 2016
25 V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel Max rDS(on) = 5.6 mΩ at VGS = 10 V, I |
Fairchild Semiconductor |
|
FDMS3602S | 25V Asymmetric Dual N-Channel MOSFET FDMS3602S PowerTrench® Power Stage
FDMS3602S
PowerTrench® Power Stage
25 V Asymmetric Dual N-Channel MOSFET General Description
Features
Q1: N-Channel Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A M |
ON Semiconductor |
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