FDMC8878 डाटा शीट PDF( Datasheet )

FDMC8878 N-Channel Power Trench® MOSFET February 2007 FDMC8878 N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ Features General Description „ Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A „ Max rDS(on) =

FDMC8878 N-Channel POWERTRENCH) MOSFET 30 V, 16.5 A, 14 mW This N−Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management appl