FDMC86260 डाटा शीट PDF( Datasheet )

MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 25 A, 34 mW FDMC86260 General Description This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Ga

FDMC86260 N-Channel Power Trench® MOSFET FDMC86260 N-Channel Power Trench® MOSFET 150 V, 16 A, 34 mΩ December 2012 Features General Description „ Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A „ Max r

FDMC86260ET150 N-Channel Power Trench® MOSFET FDMC86260ET150 N-Channel Power Trench® MOSFET 150 V, 25 A, 34 mΩ January 2015 Features General Description „ Extended TJ rating to 175°C „ Max rDS(on) =

MOSFET – N-Channel, POWERTRENCH) 150 V, 25 A, 34 mW FDMC86260ET150 General Description This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that has been especially tailored to mi