FDMC8622 डाटा शीट PDF( Datasheet )

FDMC8622 N-Channel Power Trench® MOSFET September 2012 FDMC8622 N-Channel Power Trench® MOSFET 100 V, 16 A, 56 m: Features „ Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A „ Max rDS(on) = 90 m: at VGS = 6 V,

MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 16 A, 56 mW FDMC8622 General Description This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gat