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FDMC86102LZ | N-Channel Power Trench MOSFET FDMC86102LZ N-Channel Power Trench® MOSFET
April 2011
FDMC86102LZ
N-Channel Power Trench® MOSFET
100 V, 22 A, 24 mΩ
Features
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 35 mΩ at VGS |
Fairchild Semiconductor |
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FDMC86102LZ | N-Channel MOSFET MOSFET - N-Channel, Shielded Gate, POWERTRENCH)
100 V, 24 mW , 22 A
FDMC86102LZ
Description This N−Channel logic Level MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that incorporates Shi |
ON Semiconductor |
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