डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMC8360L | N-Channel Shielded Gate Power Trench MOSFET FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET
June 2013
FDMC8360L
N-Channel Shielded Gate Power Trench® MOSFET
40 V, 80 A, 2.1 mΩ
Features
Shielded Gate MOSFET Technology Max rDS(on) = 2.1 m |
Fairchild Semiconductor |
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FDMC8360L | N-Channel MOSFET MOSFET – N-Channel, Shielded Gate POWERTRENCH)
40 V, 80 A, 2.1 mW
FDMC8360L
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Ga |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |