डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMC510P | MOSFET FDMC510P P-Channel PowerTrench® MOSFET
FDMC510P
P-Channel PowerTrench® MOSFET
-20 V, -18 A, 8.0 mΩ
Features
Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID |
Fairchild Semiconductor |
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FDMC510P | P-Channel MOSFET MOSFET – P-Channel, POWERTRENCH)
-20 V, -18 A, 8.0 mW
FDMC510P
General Description This P−Channel MOSFET is produce using onsemi’s advanced
POWERTRENCH® process that has been optimized for rDS(ON), switc |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |