| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET Max rDS(on) = 11.0mΩ at VGS = 10V, ID = 35A Max rDS(on) = 14.0mΩ at VGS = 4.5V, ID = 35A Low gate charge: Qg(10) = 18nC(Typ), VGS = 10V Low gate resistance Avalanche rated and 100% tested RoHS Compliant D G D G DS I-PAK S G (TO-25 |
|