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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDC642P | P-Channel MOSFET FDC642P
July 1999
FDC642P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especi |
Fairchild Semiconductor |
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FDC642P | P-Channel MOSFET FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
FDC642P
Single P-Channel 2.5V Specified PowerTrench® MOSFET
-20 V, -4.0 A, 65 mΩ
Features
General Description
Max rDS(on) = 65 mΩ at VGS |
ON Semiconductor |
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FDC642P-F085 | P-Channel MOSFET MOSFET – P-Channel, POWERTRENCH
-20 V, -4 A, 100 mW
FDC642P-F085, FDC642P-F085P
Features
• Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A � |
ON Semiconductor |
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FDC642P-F085P | P-Channel MOSFET MOSFET – P-Channel, POWERTRENCH
-20 V, -4 A, 100 mW
FDC642P-F085, FDC642P-F085P
Features
• Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A � |
ON Semiconductor |
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FDC642P_F085 | P-Channel PowerTrench MOSFET FDC642P_F085 P-Channel PowerTrench® MOSFET
FDC642P_F085
P-Channel PowerTrench® MOSFET
-20V, -4A, 100mΩ
Features
Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A Typ rDS(on) = 75.3mΩ at VGS = -2.5V, |
Fairchild Semiconductor |
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