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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDB2710 | N-Channel MOSFET FDB2710 — N-Channel PowerTrench® MOSFET
November 2013
FDB2710
N-Channel PowerTrench® MOSFET
250 V, 50 A, 42.5 mΩ
Features
• RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
• High Performance Tren |
Fairchild Semiconductor |
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FDB2710 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
FDB2710
FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 42.5mΩ(Max) ·100% avalanche test |
Inchange Semiconductor |
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