| No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·S |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns) • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Cosseff.=95pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprie |
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Fairchild Semiconductor |
SuperFET MOSFET • 650V @Tj = 150°C • Typ. Rds(on)=0.32Ω • Ultra low gate charge (typ. Qg=40nC) • Low effective output capacitance (typ. Coss.eff=95pF) • 100% avalanche tested • RoHS Compliant D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unle |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A • Ultra Low Gate Charge (Typ. Qg = 27.4 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PDP TV • Lighting • Solar Inve |
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