No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N 650 V 650 V 650 V 650 V 650 V < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω 21 A 21 A 21 A(1) 21 A 21 A 1. Limited only by maximum temperature all |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB25NM60N t(s)STB25NM60N-1 cSTF25NM60N uSTP25NM60N rod )STW25NM60N 650 V 650 V 650 V 650 V 650 V < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω 21 A 21 A 21 A(1) 21 A 21 A P t(s1. Limited only by maximum |
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STMicroelectronics |
N-channel MOSFET Type www.DataSheet4U.com VDSS @ TJMAX RDS(on) max ID 3 3 1 2 3 1 2 1 STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND 650 V 0.16 Ω 21 A 21 A 21 A(1) 21 A 21 A TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allow |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 160mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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