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EPC8 | Enhanced Configuration Devices April 2002, ver. 2.0
Enhanced Configuration Devices
®
(EPC4, EPC8 & EPC16)
Data Sheet
Features
Preliminary Information
Altera Corporation
DS-ECD-2.0
■ Enhanced configuration devices include EPC4, EPC8, an |
Altera |
|
EPC8002 | Power Transistor eGaN® FET DATASHEET
EPC8002 – Enhancement Mode Power Transistor
VDS , 65 V RDS(on) , 480 mΩ ID , 2 A
D G
S
EPC8002
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobilit |
EPC |
|
EPC8004 | Power Transistor eGaN® FET DATASHEET
EPC8004 – Enhancement Mode Power Transistor
VDS , 40 V RDS(on) , 110 mΩ ID , 4 A
D G
S
EPC8004
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobilit |
EPC |
|
EPC8009 | Power Transistor eGaN® FET DATASHEET
EPC8009 – Enhancement Mode Power Transistor
VDS , 65 V RDS(on) , 130 mΩ ID , 4 A
D G
S
EPC8009
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobilit |
EPC |
|
EPC8010 | Power Transistor eGaN® FET DATASHEET
EPC8010 – Enhancement Mode Power Transistor
VDS , 100 V RDS(on) , 160 mΩ ID , 4 A
D G
S
EPC8010
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobili |
EPC |
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