डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
EPC2012 | Power Transistor eGaN® FET DATASHEET
EPC2012 – Enhancement Mode Power Transistor
VDSS , 200 V RDS(ON) , 100 mW ID , 3 A
NEW PRODUCT
EPC2012
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and p |
EPC |
|
EPC2012C | Power Transistor eGaN® FET DATASHEET
EPC2012C – Enhancement Mode Power Transistor
VDS , 200 V RDS (on) , 100 mΩ ID , 5 A
D G
S
EPC2012C
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mob |
EPC |
www.DataSheet.in | 2017 | संपर्क |