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EMB2 | PNP -100mA -50V Complex Digital Transistors EMB2 / UMB2N / IMB2A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2
EMT6
(6) (1) (5) (4)
UMT6
IC(MAX.) R1 R2
VCC
-50V -100mA 47kW 4 |
Rohm |
|
EMB20D03H | MOSFET
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
30V ‐30V
RDSON (MAX.)
6.5mΩ 20mΩ
ID 26A ‐15A
|
Excelliance MOS |
|
EMB20N03A | MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
20mΩ
ID 15A G
UIS, Rg 100% Tested
S
Pb‐Free Lead |
Excelliance MOS |
|
EMB20N03G | MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
20mΩ
ID 9.5A G
UIS, Rg 100% Tested
S
Pb‐Free Lead |
Excelliance MOS |
|
EMB20N03Q | MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
22mΩ
ID 6A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead |
Excelliance MOS |
|
EMB20N03V | N-Channel MOSFET CHIPSET-IC.COM
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
20mΩ
ID 12A G
UIS, Rg 100% Tested
S
P |
Excelliance MOS |
|
EMB20N03VAA | MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
20mΩ
ID 7A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead |
Excelliance MOS |
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