EKV550 डाटा शीट PDF( Datasheet )

50V N-ch MOSFET EKV550 January. 2006 ■Features • Low on-resistance • Avalanche energy capability guaranteed • Built-in Gate protection diode against electrostatic discharge (ESD) ■Package—TO-220

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) ·100% avalanche tested ·Minimum