| No. | Partie # | Fabricant | Description | Fiche Technique |
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Philips |
Miniwatt |
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Motorola |
16 AMPERE POWER TRANSISTORS ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ |
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INCHANGE |
PNP Transistor to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJE4350/4351/4352/4353 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS |
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ROHM |
CMOS Voltage Detector Counter Timer Built-in No delay time setting capacitor required Ultra-low current consumption Two output types (Nch open drain and CMOS output) Package SSOP5 is similar to SOT-23-5 (JEDEC) AEC-Q100 Qualified ●Key Specifications Detecti |
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Motorola |
16 AMPERE POWER TRANSISTORS ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ |
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Clairex |
Aluminum Gallium Arsenide Dome Lens Can • exceptionally high power output • 660nm wavelength • TO-46 hermetic package • narrow radiation pattern • RoHS compliant description The CLE435 is an advanced, high-efficiency, high speed, AlGaAs light emitting diode. The TO-46 header provides the t |
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Clairex |
Gallium Arsenide Phosphide Flat Window Can • high power output • 660nm wavelength • TO-46 hermetic package • RoHS compliant description The CLE435W is a high speed, GaAsP light emitting diode. The TO46 header provides the thermal environment for reliable operation over an extremely wide tempe |
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Peregrine Semiconductor |
RF Digital Step Attenuator • Wideband support up to 55 GHz • Glitch-safe attenuation state transitions • Flexible attenuation steps of 0.5 dB and 1 dB up to 31.5 dB • Extended +105 °C operating temperature • Parallel and serial programming interfaces with serial addressability |
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SavantIC |
(MJE4350 - MJE4353) SILICON POWER TRANSISTOR Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE4350 MJE4351 IC=-100mA ;IB=0 MJE4352 MJE4353 VCE(sat)-1 VC |
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SavantIC |
(MJE4350 - MJE4353) SILICON POWER TRANSISTOR Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE4350 MJE4351 IC=-100mA ;IB=0 MJE4352 MJE4353 VCE(sat)-1 VC |
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SavantIC |
(MJE4350 - MJE4353) SILICON POWER TRANSISTOR Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE4350 MJE4351 IC=-100mA ;IB=0 MJE4352 MJE4353 VCE(sat)-1 VC |
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Rohm |
CMOS Voltage Detector Counter Timer Built-in No delay time setting capacitor required Ultra-low current consumption Two output types (Nch open drain and CMOS output) Package SSOP5 is similar to SOT-23-5 (JEDEC) AEC-Q100 Qualified ●Key Specifications Detecti |
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Rohm |
CMOS Voltage Detector Counter Timer Built-in No delay time setting capacitor required Ultra-low current consumption Two output types (Nch open drain and CMOS output) Package SSOP5 is similar to SOT-23-5 (JEDEC) AEC-Q100 Qualified ●Key Specifications Detecti |
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Peregrine Semiconductor |
RF Digital Attenuator HaRP™-enhanced UltraCMOS™ device Attenuation: 0.5 dB steps to 15.5-dB High Linearity: Typical +58 dBm IP3 Excellent low-frequency performance 3.3 V or 5.0 V Power Supply Voltage Fast switch settling time Programming Modes: Dir |
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Peregrine Semiconductor |
RF Digital Attenuator • HaRP™-enhanced UltraCMOS™ device • Attenuation: 1 dB steps to 31 dB • High Linearity: Typical +58 dBm IP3 • Excellent low-frequency performance • 3.3 V or 5.0 V Power Supply Voltage • Fast switch settling time • Programming Modes: • Direct Parallel |
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Peregrine Semiconductor |
RF Digital Attenuator • HaRP™-enhanced UltraCMOS™ device • Attenuation: 0.25 dB steps to 7.75 dB • High Linearity: Typical +58 dBm IP3 • Excellent low-frequency performance • 3.3 V or 5.0 V Power Supply Voltage • Fast switch settling time • Programming Modes: • Direct Par |
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NTE |
Silicon PNP Transistor D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . |
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INCHANGE |
PNP Transistor to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJE4350/4351/4352/4353 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS |
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INCHANGE |
PNP Transistor to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJE4350/4351/4352/4353 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS |
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INCHANGE |
Silicon PNP Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A ;IB= -0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC |
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