डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
DSF01S30SC | Silicon Epitaxial Schottky Barrier Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSF01S30SC
DSF01S30SC
High-Speed Switching Application
Unit: mm
0.1 9±0.02
Abusolute Maximum Ratings (Ta = 25°C)
2
0.025±0.015
0.62 ±0.03 0.3 |
Toshiba Semiconductor |
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DSF01S30SC | Silicon Epitaxial Schottky Barrier Type Diode | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |