DMP6180SK3 डाटा शीट PDF( Datasheet )

isc P-Channel MOSFET Transistor FEATURES ·Drain Current –ID= -14A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =110mΩ(Max) ·100% avalanche tested ·Min

NEW PRODUCT DMP6180SK3 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -60V RDS(ON) Max 110mΩ @ VGS = -10V 140mΩ @ VGS = -4.5V ID TC = +25°C -14A -12A Features and Benefits  Low On-Res

isc P-Channel MOSFET Transistor DMP6180SK3-13 ·FEATURES ·Static drain-source on-resistance: RDS(on)≦110mΩ(@VGS= -10V; ID= -12A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-

DMP6180SK3Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -60V RDS(ON) Max 110mΩ @ VGS = -10V 140mΩ @ VGS = -4.5V ID TC = +25°C -14A -12A Features and Benefits  Low On-Resistance 