DMNH10H028SK3 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor DMNH10H028SK3 FEATURES ·Drain Current –ID= 55A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) ·100% avalanch

Green DMNH10H028SK3 100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 28mΩ @ VGS = 10V ID Max TC = +25°C 55A Description and Applications This new generation MOSFET

A D VNAEN CWEPDRIONDFUOCRTM A T I O N Green DMNH10H028SK3Q 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) max 28mΩ @ VGS = 10V ID max TC = +25°C 55A Description and