DMN80H2D0SCTI डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor DMN80H2D0SCTI FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) ·100% avalanche

DMN80H2D0SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 800V RDS(ON) 2.0Ω@VGS = 10V Package ITO220AB (Type TH) ID TC = +25°C 7A Description This new generation MOSFET features low on-resis