डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
DMN60H4D5SK3 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.5Ω(Max) ·100% avalanche tested ·Min |
INCHANGE |
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DMN60H4D5SK3 | N-CHANNEL MOSFET DMN60H4D5SK3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 600V
RDS(ON) 4.5Ω@VGS = 10V
ID TC = +25°C
2.5A
Description
This new generation MOSFET features low on-resistance and fast switching, m |
DIODES |
www.DataSheet.in | 2017 | संपर्क |