DMN60H3D5SK3 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5Ω(Max) ·100% avalanche tested ·Min

A D V A N C E DNIEN FWOPRRMOADT IU COTN Green DMN60H3D5SK3 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 600V RDS(ON) Max 3.5 @ VGS = 10V ID TC = +25°C 2.8A Description This new gener