DMN53D0L डाटा शीट PDF( Datasheet )

NEW PRODUCT DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 500 mA 200 mA Description and Application

NEW PRODUCT DMN53D0LDW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 360mA 250mA Description and Applicati

DMN53D0LDWQ 50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 0.46A 0.36A Features  Dual N-Channel MOSFET  Low On-Resi

DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 500mA 200mA Description and Applications This MOSFET is

NEW PRODUCT DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 350 mA 200 mA Description and Applicatio

NEW PRODUCT DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 350 mA 200 mA Description and Appli

Product Summary BVDSS 50V RDS(ON) 2.0Ω @ VGS = 10V 3.0Ω @ VGS = 5V ID TA = +25°C 360mA 250mA Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance