DMJ70H601SV3 डाटा शीट PDF( Datasheet )

NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATIVE PART DMJ70H601SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 700V RDS(ON) Max 0.6Ω @ VGS = 10V ID TC = +25°C 8A Features and Benefits  Low O

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 700V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100% avalanche tested ·Min