DMJ70H1D3SH3 डाटा शीट PDF( Datasheet )

NEW PRODUCT Product Summary BVDSS 700V RDS(on) max 1.3Ω @ VGS = 10V ID TC = +25°C 4.6A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4.6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 700V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) ·100% avalanche tested ·Min