DMG8N65SCT डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) ·100% avalanche tested ·Min

DMG8N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 650V RDS(ON) 1.3Ω@VGS = 10V Package TO220AB (Type TH) ID TC = +25°C 8A Description This new generation MOSFET features low on-resistanc