DMG7N65SCT डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 7.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·100% avalanche tested ·Min

OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG7N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) 650V 1.4Ω @VGS = 10V ID TC = +25°C 7.7A Features and Benefits �

OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG7N65SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 650V RDS(ON) 1.4Ω @VGS = 10V ID TC = +25°C 4.7A Features and Benefits 

isc N-Channel MOSFET Transistor DMG7N65SCTI FEATURES ·Drain Current –ID= 7.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·100% avalanche