DMG4N65CTI डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) ·100% avalanche tested ·Minim

ADVANCE INFORMATIO DMG4N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) 650V 3.0Ω@VGS = 10V Package ITO220-3 ID TC = 25°C 4.0 A Description This new generation complementary