DMG4N60SK3 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 3.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max) ·100% avalanche tested ·Min

OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG4N60SK3 Green 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS (@ TJ Max) 650V RDS(ON) Max 2.3Ω @ VGS = 10V ID TC = +25°C 3.