DMG4N60SCT डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max) ·100% avalanche tested ·Min

OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG4N60SCT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) 2.5Ω@VGS = 10V ID TC = +25°C 4.5A Description