DMG3N60SJ3 डाटा शीट PDF( Datasheet )

DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) Max 3.5Ω @ VGS = 10V ID @TC = +25°C 2.8A Description and Applications This new generation MOSFET is designed to

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max) ·100% avalanche tested ·Mi