DMG10N60SCT डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 750mΩ(Max) ·100% avalanche tested ·Min

Product Summary BVDSS 600V RDS(ON) 0.75Ω@VGS = 10V ID TC = +25°C 12A DMG10N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low Input Capacitance  High BVDSS Rating for Power Applicati