| No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=28A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 30mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·D |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------100 V (ID = 100 µA) ID ---------------------------------------------------------- 28 A RDS(ON) -------- 30.0 mΩ max. (VGS = 10 V, ID = 14.2 A) Qg------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) L |
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