| No. | Partie # | Fabricant | Description | Fiche Technique |
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IXYS Corporation |
RF Power MOSFET TJ = 25°C unless otherwise specified SG1 SG2 GATE = = = = 1000 V 10 A 1.2 Ω 940 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, |
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