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ST Microelectronics |
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs ■ ■ ■ ■ ■ ■ ■ Excellent thermal stability Frequency: 318 - 450 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 14.6 ± 0.6 dB Efficiency: 52 % - 73 % BeO free amplifier Description The DB-55008L-450 is a common source N-channel enhancement- |
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